The FEI Helios Nanolab 660 is a state-of-the-art Ga-FIB/SEM tool with an electron image resolution of 0.9nm between 1kV and 30kV and a resolution of 1.5nm between 350V and 1kV. The resolution  for ion imaging is 2.5nm at 30kV. The system features a wealth of detectors such as SE, BSE and SI chamber detectors and SE, BSE and low-loss BSE in-column detectors as well as STEM detectors for operation as a low-voltage STEM (BF, annular DF1-4 and a segmented HAADF).

The system also enables for ultra-low landing energy imaging with a freely adjustable beam deceleration option of up to 4kV.

The system is well equipped for focussed ion beam based sample modification using any of the 5 GIS systems for deposition of C, Pt or W and XeF₂ for enhanced removal of material (Si and SiO₂). It also features an experimental gas inlet for parallel local injection of a gas (air, O₂) or in-situ low-voltage Ar-sputtering (currently not configured). It is furthermore equipped with the FEI EasyLift, the FEI micromanipulator which is fully integrated into the system.

In addition, the system has 7 electrical feed-throughs for in situ experiments (common ground), the possibility for 2 door-mounted Kleindiek manipulators (tips, grippers, rototip and electrical transport measurement). It is possible to reconfigure the system to 4 electrical contacts (2 Kleindiek, microscope stage and EasyLift). There is also a homebuilt heating stage available.

The system is ideally suited for low-voltage, high resolution SEM studies, TEM sample preparation, circuit modification, in situ experiments and much more.

Experience in FIB/SEM usage, preferably on FEI tools and/or training course and signing of user agreement. License required. Contact the DCN staff for further details.

Booking in chunks of 1h, maximum 1 day.