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Wafer Reinigung

Informationen

Name: Wafer Reinigung
Einrichtung: 300 mm CMOS-Reinraum
Partner: Fraunhofer-Institut für Photonische Mikrosysteme (IPMS)

Beschreibung

As the requirements for increased device performance and reliability have become more and more challenging in VLSI and ULSI silicon circuit technology, techniques to avoid contamination and processes to generate very clean wafer surfaces have become critically important. 

Many cleaning operations are necessary in the course of semiconductor manufacturing and must be performed at certain critical processing steps. To ensure a fast, selective, uniform and cost effective cleaning, the Center Nanoelectronic Technologies provides a state-of-the-art cleaning platform. 

As a chain link between suppliers and fab we are able to screen, evaluate and optimize new chemicals and processes from laboratory scale up to testing on own 2x nm node test wafers. 

Applications

  • 2x nm technology node
  • From beaker test to 300 mm industry scale
  • PostEtchResidualRemoval (PERR)
  • Photoresist stripping
  • Lithography stack rework
  • Dual damascene metal hard mask etch
  • Bath life time evaluation
  • Consumable benchmarking

Analytic Services:

  • Surfscan wafer analysis (KLA Tencor SP2)
  • Patterned defect inspection (NextIn Aegis I)
  • Review SEM (Applied Materials G3 FIB)
  • 4-point resistivity measurement (KLA Tencor RS100)
  • Porosimetry (Semilab SOPRA EP5)
  • Ellipsometry (KLA Tencor FX100)
  • FIB-SEM, TEM (FEI Strata400 / FEI F20 (200 kV))
  • ToF SIMS (Ion ToF 300R)
  • Optical Microscope
  • Varian ATR-FTIR
  • AFM - Atomic force microscopy (Veeco Dimension™ X3D)
  • XPS - X-ray photoelectron spectroscopy (Thermo Fisher Scientific Theta 300i)

Link zu weiteren Informationen

https://www.screeningfab.com/en/processes/cleaning-center.html

Optionen der Gerätenutzung

Ansprechpartner

Dr. Benjamin Lilienthal-Uhlig
E-Mail:
Telefon:
+49 (0) 351 26 07-3064

Zugeordnete Dienstleistungen

Name Vorschau Aktionen
Screening Fab Services

Letztes Update

Zuletzt aktualisiert am: 17. Januar 2025 um 15:18:28