Atomare Schichtabscheidung
Informationen
Name: | Atomare Schichtabscheidung | |
Einrichtung: | 300 mm CMOS-Reinraum | |
Partner: | Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) |
Beschreibung
Features:
- ALD deposited High-k oxides and electrodes for: stand-alone memory and embedded memory (SRAM, DRAM, RRAM and FRAM)
- HfO2, TiN and TaN for High-k / Metal Gate (HKMG) for different flavors: high-k first, high-k last, FDSOI and FinFET transistor technologies
- Fully CMOS-compatible ALD deposited HfO2 based ferroelectrics for FeFET NVM memory
- Passive components integrating ALD deposited 3D high-k MIM capacitors (for buffering and decoupling purposes in chip (System on Chip - SoC) or package (System in Package - SiP) level)
- Plasma activated ALD (PEALD) nickel for NiSi source/drain contacts
- ALD processes of metal and metal nitrides integrated in 28 nm BEOL copper interconnects
- PEALD oxide and nitrides for the transistor module and for sub 28 nm double patterning schemes such as SADP
- Hardmask for high aspect etching in silicon and oxide
- Passivation layers for photovoltaics
- ALD processes for MEMS/MOEMS applications: etch stops, wear resistant layers, optical layers (Bragg mirror) and sensor materials (ISFET)
Rapid ALD precursor screening:
- Fast screening by employing in-situ analytics (QCM and QMS)
- Fundamental research on nucleation fi lm growth and step coverage
- Scale up to from small samples up to 300 mm wafers
- Single wafer and Large Batch ALD
- Crossflow, Showerhead and Batch Furnace process chambers
Materials research and development for:
- High-k oxides (HfO2, ZrO2, TiO2, Al2O3 ,SiO2)
- Metals and metal nitrides
- Cu BEoL barrier/seed
- Hardmasks for high aspect ratio etching in silicon and oxide
- Liners and spacer
- Low cycle-time test chip for electrical read out for MIS / MIM devices
- Planar and 3D high-aspect ratio structures
Link zu weiteren Informationen
Optionen der Gerätenutzung
- Dieses Gerät wird im Rahmen einer Dienstleistung oder Forschungsleistung (Kooperation) verwendet.
Ansprechpartner
Zugeordnete Dienstleistungen
Name | Vorschau | Aktionen |
---|---|---|
Screening Fab Services |
Letztes Update
Zuletzt aktualisiert am: 17. Januar 2025 um 15:03:58