Features:

• ALD deposited High-k oxides and electrodes for: stand-alone memory and embedded memory (SRAM, DRAM, RRAM and FRAM)
• HfO2, TiN and TaN for High-k / Metal Gate (HKMG) for different flavors: high-k first, high-k last, FDSOI and FinFET transistor technologies
• Fully CMOS-compatible ALD deposited HfO2 based ferroelectrics for FeFET NVM memory
• Passive components integrating ALD deposited 3D high-k MIM capacitors (for buffering and decoupling purposes in chip (System on Chip - SoC) or package (System in Package - SiP) level)
• Plasma activated ALD (PEALD) nickel for NiSi source/drain contacts
• ALD processes of metal and metal nitrides integrated in 28 nm BEOL copper interconnects
• PEALD oxide and nitrides for the transistor module and for sub 28 nm double patterning schemes such as SADP
• Hardmask for high aspect etching in silicon and oxide
• Passivation layers for photovoltaics 
• ALD processes for MEMS/MOEMS applications: etch stops, wear resistant layers, optical layers (Bragg mirror) and sensor materials (ISFET)

Rapid ALD precursor screening:

• Fast screening by employing in-situ analytics (QCM and QMS)
• Fundamental research on nucleation fi lm growth and step coverage
• Scale up to from small samples up to 300 mm wafers
• Single wafer and Large Batch ALD
• Crossflow, Showerhead and Batch Furnace process chambers

Materials research and development for:

• High-k oxides (HfO2, ZrO2, TiO2, Al2O3 ,SiO2)
• Metals and metal nitrides
• Cu BEoL barrier/seed
• Hardmasks for high aspect ratio etching in silicon and oxide
• Liners and spacer
• Low cycle-time test chip for electrical read out for MIS / MIM devices 
• Planar and 3D high-aspect ratio structures