View all instruments of this unit Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) Applied Materials Centura
Basic Information
| Name: | Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) | |
| Manufacturer: | Applied Materials | |
| Model: | Centura | |
| Facility: | 200 mm MEMS-Cleanroom | |
| Partner: | Fraunhofer Institute for Photonic Microsystems (IPMS) |
|
| Inventory number: | CVD01-LP, CVD03, CVD04-W | |
Description
Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) is a process used to deposit thin films from a gas state to a solid state on a substrate by creating a plasma of the reacting gases. This method allows for film deposition at lower temperatures compared to traditional CVD, making it suitable for temperature-sensitive substrates. We offer the different processes with PE-CVD:
- Silicon Oxide as ILD and Sacrifcial Layers
- a-Si:H as Sacrifcial Layers
- Silicon Nitride for Passivation / Membrane
- HDP Oxide as ILD and Sacrifcial Layers
- Tungsten for Plugs and TSVs
Options of instrument usage
- This instrument is used within a service or research collaboration.
Points of Contact
Associated Services
| Name | Preview | Actions |
|---|---|---|
| Depostion of Material on Wafer |
Last Update
Last updated at: 14 January 2025 at 10:38:56