Chemical Mechanical Polishing (CMP) Applied Materials DESICA
Basic Information
| Name: | Chemical Mechanical Polishing (CMP) | |
| Manufacturer: | Applied Materials | |
| Model: | DESICA | |
| Facility: | 200 mm MEMS-Cleanroom | |
| Partner: | Fraunhofer Institute for Photonic Microsystems (IPMS) | |
| Inventory number: | CMP03 | |
Description
Chemical Mechanical Polishing (CMP) is a process that uses both chemical reactions and mechanical forces to smooth and planarize the surface of a wafer, ensuring uniformity and removing any topographical variations.
We provide 5-zone CMP for this materials:
- Si
- SiO2
- Al2O3
- Si3N4
Options of instrument usage
- This instrument is used within a service or research collaboration.
Points of Contact
Associated Services
| Name | Preview | Actions |
|---|---|---|
| Depostion of Material on Wafer |
Last Update
Last updated at: 14 January 2025 at 11:15:56