Oxidation and Tempering Inotherm; TEL; Centroterm; Inotherm LDS200-2; Alpha 8SE; E1550 HT 320-4; E1550-310-5; LDS-200-2
Basic Information
Name: | Oxidation and Tempering | |
Manufacturer: | Inotherm; TEL; Centroterm; Inotherm | |
Model: | LDS200-2; Alpha 8SE; E1550 HT 320-4; E1550-310-5; LDS-200-2 | |
Facility: | 200 mm MEMS-Cleanroom | |
Partner: | Fraunhofer Institute for Photonic Microsystems (IPMS) | |
Inventory number: | CVD01-LP, FUR04, FUR06, FUR03 |
Description
Oxidation can be used to create a protective silicon dioxide layer on the wafer.
We offer different instruments for the oxidation process.
- POCl3 (LDS200-2 | Inotherm)
- Thermal, SiO2 (vertical) (Alpha 8SE | TEL)
- SiC High Temperature Furnace up to 1200°C (E1550 HT 320-4 | Centroterm)
With E1550-310-5 | Centroterm is is also possible to perform oxidation and temperting.
- Dry / wet oxidation 600 °C - 1050 °C
Horizontal Tempering and H2 tempering with LDS200-2 | Inotherm.
Options of instrument usage
- This instrument is used within a service or research collaboration.
Points of Contact
Associated Services
Name | Preview | Actions |
---|---|---|
Depostion of Material on Wafer |
Last Update
Last updated at: 14 January 2025 at 11:05:55